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AM29F016-120EC 参数 Datasheet PDF下载

AM29F016-120EC图片预览
型号: AM29F016-120EC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2,097,152 ×8位) CMOS 5.0伏只,扇区擦除闪存 [16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 36 页 / 220 K
品牌: AMD [ AMD ]
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ERASE AND PROGRAMMING PERFORMANCE  
Limits  
Parameter  
Sector Erase Time  
Min  
Typ  
Max  
Unit  
Comments  
Excludes00H programmingprior  
to erasure  
1 (Note 1)  
8
sec  
Excludes00H programmingprior  
to erasure  
Chip Erase Time  
32  
7
256  
sec  
Byte Programming Time  
Chip Programming Time  
300 (Note 3)  
µs  
Excludes system-level overhead  
Excludes system-level overhead  
14.4 (Note 1) 43.2 (Notes 2, 3)  
sec  
Notes:  
1. 25°C, 5 V VCC, 100,000 cycles.  
2. Although Embedded Algorithms allow for a longer chip program and erase time, the actual time will be considerably less since  
bytes program or erase significantly faster than the worst case byte.  
3. Under worst case condition of 90°C, 4.5 V VCC, 100,000 cycles.  
LATCHUP CHARACTERISTIC  
Min  
Max  
Input Voltage with respect to VSS on I/O pins  
–1.0 V  
VCC + 1.0 V  
+100 mA  
VCC Current  
–100 mA  
Includes all pins except VCC. Test conditions: VCC = 5.0 Volt, one pin at a time.  
TSOP PIN CAPACITANCE  
Parameter  
Symbol  
Parameter Description  
Input Capacitance  
Test Conditions  
Min  
6
Max  
7.5  
12  
Unit  
CIN  
VIN = 0  
VOUT = 0  
VIN = 0  
pF  
pF  
pF  
COUT  
CIN2  
Output Capacitance  
8.5  
7.5  
Control Pin Capacitance  
9
Notes:  
1. Sampled, not 100% tested.  
2. Test conditions TA = 25°C, f = 1.0 MHz.  
34  
Am29F016  
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