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AM29F016-120EC 参数 Datasheet PDF下载

AM29F016-120EC图片预览
型号: AM29F016-120EC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2,097,152 ×8位) CMOS 5.0伏只,扇区擦除闪存 [16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 36 页 / 220 K
品牌: AMD [ AMD ]
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SWITCHING WAVEFORMS  
Data Polling  
PA  
3rd Bus Cycle  
Addresses  
5555H  
tWC  
PA  
tAH  
tRC  
tAS  
CE  
OE  
tGHWL  
tWHWH1  
tWP  
WE  
tWPH  
tCS  
tDF  
tDH  
tOE  
Data  
PD  
DQ7  
A0H  
DOUT  
tDS  
tOH  
5.0 Volt  
tCE  
Notes:  
1. PA is address of the memory location to be programmed.  
2. PD is data to be programmed at byte address.  
3. DQ7 is the output of the complement of the data written to the device.  
4. DOUT is the output of the data written to the device.  
5. Figure indicates last two bus cycles of four bus cycle sequence.  
18805D-13  
Figure 9. Program Operation Timings  
tAH  
5555H  
Addresses  
CE  
2AAAH  
tAS  
5555H  
5555H  
2AAAH  
SA  
tGHWL  
OE  
tWP  
tWPH  
WE  
tCS  
tDH  
Data  
AAH  
55H  
80H  
AAH  
55H  
10H/30H  
tDS  
VCC  
tVCS  
Note:  
SA is the sector address for Sector Erase. Addresses = don’t care for Chip Erase.  
18805D-14  
Figure 10. AC Waveforms Chip/Sector Erase Operations  
28  
Am29F016  
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