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AM29F016-120EC 参数 Datasheet PDF下载

AM29F016-120EC图片预览
型号: AM29F016-120EC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2,097,152 ×8位) CMOS 5.0伏只,扇区擦除闪存 [16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 36 页 / 220 K
品牌: AMD [ AMD ]
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AC CHARACTERISTICS  
Read-only Operations Characteristics  
Parameter Symbol  
Speed Options (Notes 1 and 2)  
JEDEC Standard  
Parameter Description  
Read Cycle Time 4  
Test Setup  
Min  
-75  
-90  
-120  
-150  
Unit  
tAVAV  
tAVQV  
tRC  
70  
90  
120  
150  
ns  
CE = VIL  
OE = VIL  
tACC  
Address to Output Delay  
Max  
70  
90  
120  
150  
ns  
tELQV  
tGLQV  
tCE  
tOE  
Chip Enable to Output Delay  
Output Enable to Output Delay  
OE = VIL Max  
Max  
70  
40  
90  
40  
120  
50  
150  
55  
ns  
ns  
Chip Enable to Output High Z  
(Notes 3, 4)  
tEHQZ  
tGHQZ  
tAXQX  
tDF  
Max  
Max  
Min  
20  
20  
0
20  
20  
0
30  
30  
0
35  
35  
0
ns  
ns  
ns  
µs  
Output Enable to Output High Z  
(Notes 3, 4)  
tDF  
Output Hold Time From Addresses CE  
or OE Whichever Occurs First  
tOH  
RESET Pin Low to Read Mode  
4
tReady  
Max  
20  
20  
20  
20  
Notes:  
1. Test Conditions (for -75):  
Output Load: 1 TTL gate and 30 pF  
Input rise and fall times: 5 ns  
Input pulse levels: 0.0 V to 3.0 V  
Timing measurement reference level: 1.5 V input and  
output  
2. Test Conditions (for all others):  
Output Load: 1 TTL gate and 100 pF  
Input rise and fall times: 20 ns  
Input pulse levels: 0.45 V to 2.4 V  
Timing measurement reference level: 0.8 V and 2.0 V  
input and output  
3. Output driver disable time.  
4. Not 100% tested.  
5.0 Volt  
IN3064  
2.7 kΩ  
or Equivalent  
Device  
Under  
Test  
6.2 kΩ  
CL  
Diodes = IN3064  
or Equivalent  
Note:  
CL (for -75) = 30 pF including jig capacitance  
CL (for all others) = 100 pF including jig capacitance  
18805D-11  
Figure 7. Test Conditions  
Am29F016  
25  
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