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AM29F016-120EC 参数 Datasheet PDF下载

AM29F016-120EC图片预览
型号: AM29F016-120EC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2,097,152 ×8位) CMOS 5.0伏只,扇区擦除闪存 [16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 36 页 / 220 K
品牌: AMD [ AMD ]
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DC CHARACTERISTICS  
TTL/NMOS Compatible  
Parameter  
Symbol  
Parameter Description  
Test Description  
VIN = VSS to VCC, VCC = VCC Max  
VCC = VCC Max, A9 = 12.0 Volt  
VOUT = VSS to VCC, VCC = VCC Max  
CE = VIL, OE = VIH  
Min  
Max  
±1.0  
50  
Unit  
µA  
µA  
µA  
mA  
mA  
mA  
mA  
V
ILI  
Input Load Current  
ILIT  
A9 Input Load Current  
Output Leakage Current  
VCC Active Current (Note 1)  
ILO  
±1.0  
40  
ICC1  
ICC2  
ICC3  
ICC4  
VIL  
VCC Active Current (Notes 2, 3) CE = VIL, OE = VIH  
60  
VCC Standby Current  
VCC Standby Current (Reset)  
Input Low Level  
VCC = VCC Max, CE = VIH, RESET = VIH  
1.0  
VCC = VCC Max, RESET = VIL  
1.0  
–0.5  
2.0  
0.8  
VIH  
Input High Level  
VCC + 0.5  
V
Voltage for Autoselect and Sector  
Protect  
VID  
VCC = 5.0 Volt  
11.5  
12.5  
0.45  
V
VOL  
VOH  
VLKO  
Output Low Voltage  
Output High Level  
IOL = 12 mA, VCC = VCC Min  
IOH = –2.5 mA VCC = VCC Min  
V
V
V
2.4  
3.2  
Low VCC Lock-out Voltage  
4.2  
Notes:  
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).  
The frequency component typically is less than 1 mA/MHz, with OE at VIH.  
2. ICC active while Embedded Program or Erase Algorithm is in progress.  
3. Not 100% tested.  
Am29F016  
23  
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