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AM29F016-120EC 参数 Datasheet PDF下载

AM29F016-120EC图片预览
型号: AM29F016-120EC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2,097,152 ×8位) CMOS 5.0伏只,扇区擦除闪存 [16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 36 页 / 220 K
品牌: AMD [ AMD ]
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Table 5. Am29F016 Command Definitions  
Fourth Bus  
Read/Write  
Cycle  
Bus  
Write  
Cycles  
Req’d  
First Bus  
Write Cycle  
Second Bus  
Write Cycle  
Third Bus  
Write Cycle  
Fifth Bus  
Write Cycle  
Sixth Bus  
Write Cycle  
Command  
Sequence  
Read/Reset  
Addr  
Data  
Addr  
Data  
Addr  
Data Addr Data Addr Data Addr Data  
Reset/Read  
Reset/Read  
Autoselect  
1
3
3
4
6
6
1
1
XXXXH F0H  
5555H AAH 2AAAH 55H  
5555H AAH 2AAAH 55H  
5555H AAH 2AAAH 55H  
5555H AAH 2AAAH 55H  
5555H AAH 2AAAH 55H  
XXXXH B0H  
5555H F0H  
5555H 90H  
5555H A0H  
RA  
PA  
RD  
Byte Program  
Chip Erase  
Data  
5555H 80H 5555H AAH 2AAAH 55H 5555H 10H  
5555H 80H 5555H AAH 2AAAH 55H SA 30H  
Sector Erase  
Erase Suspend  
Erase Resume  
XXXXH 30H  
Notes:  
1. Bus operations are defined in Table 1.  
2. RA = Address of the memory location to be read.  
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse.  
SA= Address of the sector to be erased. The combination of A20, A19, A18, A17, and A16 will uniquely select any sector.  
3. RD = Data read from location RA during read operation.  
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE.  
4. Read and Byte program functions to non-erasing sectors are allowed in the Erase Suspend mode.  
5. Address bits A15, A14, A13, A12 and A11 = X, X = don’t care.  
methodology. The operation is initiated by writing the  
Read/Reset Command  
autoselect command sequence into the command reg-  
The read or reset operation is initiated by writing the  
ister. Following the command write, a read cycle from  
read/reset command sequence into the command reg-  
address XX00H retrieves the manufacturer code of  
ister. Microprocessor read cycles retrieve array data  
01H. A read cycle from address XX01H returns the de-  
from the memory. The device remains enabled for  
vice code ADH (see Table 2).  
reads until the command register contents are altered.  
All manufacturer and device codes will exhibit odd par-  
ity with DQ7 defined as the parity bit.  
The device will automatically power-up in the read/  
reset state. In this case, a command sequence is not  
required to read data. Standard microprocessor read  
cycles will retrieve array data. This default value en-  
sures that no spurious alteration of the memory content  
occurs during the power transition. Refer to the AC  
Read Characteristics and Waveforms for the specific  
timing parameters.  
Furthermore, the write protect status of sectors can be  
read in this mode. Scanning the sector group  
addresses (A18, A19, and A20) while (A6, A1, A0) = (0,  
1, 0) will produce a logical “1” at device output DQ0 for  
a protected sector group.  
To terminate the operation, it is necessary to write the  
read/reset command sequence into the register.  
Autoselect Command  
Flash memories are intended for use in applications  
where the local CPU can alter memory contents. As  
such, manufacture and device codes must be  
accessible while the device resides in the target sys-  
tem. PROM programmers typically access the signa-  
ture codes by raising A9 to a high voltage. However,  
multiplexing high voltage onto the address lines is not  
generally a desirable system design practice.  
Byte Programming  
The device is programmed on a byte-by-byte basis.  
Programming is a four bus cycle operation. There are  
two “unlock” write cycles. These are followed by the  
program set-up command and data write cycles. Ad-  
dresses are latched on the falling edge of CE or WE,  
whichever happens later and the data is latched on the  
rising edge of CE or WE, whichever happens first. The  
rising edge of CE or WE (whichever happens first) be-  
gins programming using the Embedded Program Algo-  
The device contains an autoselect command operation  
to supplement traditional PROM programming  
12  
Am29F016