P R E L I M I N A R Y
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
= V to V
Min
Typ
Max
±1.0
35
Unit
µA
V
V
,
CC
IN
SS
I
Input Load Current
LI
= V
CC
CC max
I
A9 Input Load Current
Output Leakage Current
V
= V
; A9 = 12.5 V
µA
LIT
CC
CC max
V
V
= V to V
,
OUT
SS
CC
I
±1.0
µA
LO
= V
CC
CC max
5 MHz
1 MHz
5 MHz
1 MHz
7
2
7
2
12
4
CE# = V OE#
Byte Mode
V
V
,
,
IL,
=
=
IH
IH
V
Active Read Current
CC
I
mA
CC1
(Note 1)
12
4
CE# = V OE#
IL,
Word Mode
V
Active Write Current
CC
I
I
I
I
CE# = V OE#
V
, WE# = V
IL
15
0.2
0.2
0.2
30
5
mA
µA
µA
µA
CC2
CC3
CC4
CC5
IL,
=
IH
(Note 2)
V
Standby Current
V
= V
; OE# = V ;
CC
CC
CC max IL
(CE# Controlled)
CE#, RESET# = V ± 0.3 V
CC
V
Reset Current
V
= V
;
CC
CC
CC max
5
(RESET# Controlled)
RESET# = V ± 0.3 V
SS
V
V
= V ± 0.3 V;
CC
IH
IL
Automatic Sleep Mode (Note 3)
5
= V ± 0.3 V
SS
Byte
21
21
21
21
45
45
45
45
V
Active Read-While-
CE# = V
CC
IL,
IH
I
I
mA
mA
CC6
CC7
Program Current (Notes 1, 4)
OE#
OE#
V
V
=
Word
Byte
V
Active Read-While-Erase CE# = V
CC
IL,
IH
Current (Notes 1, 4)
=
Word
V
Active Program-While-
CC
CE# = V
IL,
IH
I
Erase-Suspended Current
(Note 4)
17
35
mA
CC8
OE#
V
=
V
Input Low Voltage
Input High Voltage
–0.5
0.8
V
V
IL
V
V
0.7 x V
V
+ 0.3
CC
IH
CC
Voltage for Autoselect and
Temporary Sector Unprotect
V
= 3.0 V ± 10%
CC
11.5
12.5
0.45
V
ID
V
Output Low Voltage
I
I
I
= 4.0 mA, V = V
CC min
V
V
V
OL
OL
OH
OH
CC
V
= –2.0 mA, V = V
CC min
0.85 V
OH1
OH2
CC
CC
Output High Voltage
V
= –100 µA, V = V
V
–0.4
CC
CC
CC min
Low V Lock-Out Voltage
(Note 4)
CC
V
2.3
2.5
V
LKO
Notes:
1. The I current listed is typically less than 2 mA/MHz, with OE# at V .
CC
IH
2. I active while Embedded Erase or Embedded Program is in progress.
CC
3. Automatic sleep mode enables the low power mode when addresses remain stable for t
current is 200 nA.
+ 30 ns. Typical sleep mode
ACC
4. Not 100% tested.
Am29DL800B
25
AMD [ AMD ]
