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AM29DL800BT70WBI 参数 Datasheet PDF下载

AM29DL800BT70WBI图片预览
型号: AM29DL800BT70WBI
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1一M× 8位/ 512的K× 16位) CMOS 3.0伏只,同时操作闪存 [8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory]
分类和应用: 闪存
文件页数/大小: 43 页 / 545 K
品牌: AMD [ AMD ]
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P R E L I M I N A R Y  
5 shows the address and data requirements for the  
Autoselect Command Sequence  
byte program command sequence.  
The autoselect command sequence allows the host  
system to access the manufacturer and devices codes,  
and determine whether or not a sector is protected.  
Table 5 shows the address and data requirements. This  
method is an alternative to that shown in Table 4, which  
is intended for PROM programmers and requires VID  
on address pin A9. The autoselect command sequence  
may be written to an address within a bank that is either  
in the read or erase-suspend-read mode. The autose-  
lect command may not be written while the device is  
actively programming or erasing in the other bank.  
When the Embedded Program algorithm is complete,  
that bank then returns to reading array data and ad-  
dresses are no longer latched. The system can deter-  
mine the status of the program operation by using DQ7,  
DQ6, or RY/BY#. Note that while the Embedded Pro-  
gram operation is in progress, the system can read  
data from the non-programming bank. Refer to the  
Write Operation Status section for information on these  
status bits.  
Any commands written to the device during the Em-  
bedded Program Algorithm are ignored. Note that a  
hardware reset immediately terminates the program  
operation. The program command sequence should be  
reinitiated once that bank has returned to reading array  
data, to ensure data integrity.  
The autoselect command sequence is initiated by first  
writing two unlock cycles. This is followed by a third  
write cycle that contains the bank address and the au-  
toselect command. The addressed bank then enters  
the autoselect mode. The system may read at any ad-  
dress within the same bank any number of times with-  
out initiating another autoselect command sequence:  
Programming is allowed in any sequence and across  
sector boundaries. A bit cannot be programmed  
from “0” back to a “1.” Attempting to do so may cause  
that bank to set DQ5 = 1, or cause the DQ7 and DQ6  
status bits to indicate the operation was successful.  
However, a succeeding read will show that the data is  
still “0.” Only erase operations can convert a “0” to a  
“1.”  
A read cycle at address (BA)XX00h (where BA is  
the bank address) returns the manufacturer code.  
A read cycle at address (BA)XX01h in word mode  
(or (BA)XX02h in byte mode) returns the device  
code.  
A read cycle to an address containing a sector ad-  
dress (SA) within the same bank, and the address  
02h on A7–A0 in word mode (or the address 04h on  
A6–A-1 in byte mode) returns 01h if the sector is  
protected, or 00h if it is unprotected. Refer to Tables  
2 and 3 for valid sector addresses.  
Unlock Bypass Command Sequence  
The unlock bypass feature allows the system to pro-  
gram bytes or words to a bank faster than using the  
standard program command sequence. The unlock by-  
pass command sequence is initiated by first writing two  
unlock cycles. This is followed by a third write cycle  
containing the unlock bypass command, 20h. That  
bank then enters the unlock bypass mode. A two-cycle  
unlock bypass program command sequence is all that  
is required to program in this mode. The first cycle in  
this sequence contains the unlock bypass program  
command, A0h; the second cycle contains the program  
address and data. Additional data is programmed in  
the same manner. This mode dispenses with the initial  
two unlock cycles required in the standard program  
command sequence, resulting in faster total program-  
ming time. Table 5 shows the requirements for the com-  
mand sequence.  
The system may continue to read array data from the  
other bank while a bank is in the autoselect mode. To  
exit the autoselect mode, the system must write the  
reset command to return both banks to reading array  
data. If a bank enters the autoselect mode while erase  
suspended, a reset command returns that bank to the  
erase-suspend-read mode. A subsequent Erase  
Resume command returns the bank to the erase oper-  
ation.  
Byte/Word Program Command Sequence  
The system may program the device by word or byte,  
depending on the state of the BYTE# pin. Program-  
ming is a four-bus-cycle operation. The program com-  
mand sequence is initiated by writing two unlock write  
cycles, followed by the program set-up command. The  
program address and data are written next, which in  
turn initiate the Embedded Program algorithm. The  
system is not required to provide further controls or tim-  
ings. The device automatically generates the program  
pulses and verifies the programmed cell margin. Table  
During the unlock bypass mode, only the Unlock Bypass  
Program and Unlock Bypass Reset commands are  
valid. To exit the unlock bypass mode, the system must  
issue the two-cycle unlock bypass reset command se-  
quence. The first cycle must contain the bank address  
and the data 90h. The second cycle need only contain  
the data 00h. The bank then returns to reading array  
data.  
16  
Am29DL800B  
 
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