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A400CT15VF 参数 Datasheet PDF下载

A400CT15VF图片预览
型号: A400CT15VF
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K的×8位/ 256千×16位) CMOS 1.8伏只超低电压闪存 [4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory]
分类和应用: 闪存
文件页数/大小: 44 页 / 850 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
Unlock Bypass Command Sequence  
Chip Erase Command Sequence  
The unlock bypass feature allows the system to program  
bytes or words to the device faster than using the standard  
program command sequence. The unlock bypass command  
sequence is initiated by first writing two unlock cycles. This is  
followed by a third write cycle containing the unlock bypass  
command, 20h. The device then enters the unlock bypass  
mode. A two-cycle unlock bypass program command se-  
quence is all that is required to program in this mode. The  
first cycle in this sequence contains the unlock bypass pro-  
gram command, A0h; the second cycle contains the pro-  
gram address and data. Additional data is programmed in  
the same manner. This mode dispenses with the initial two  
unlock cycles required in the standard program command  
sequence, resulting in faster total programming time. Table 5  
on page 18 shows the requirements for the command se-  
quence.  
Chip erase is a six bus cycle operation. The chip erase com-  
mand sequence is initiated by writing two unlock cycles, fol-  
lowed by a set-up command. Two additional unlock write  
cycles are then followed by the chip erase command, which  
in turn invokes the Embedded Erase algorithm. The device  
does not require the system to preprogram prior to erase.  
The Embedded Erase algorithm automatically preprograms  
and verifies the entire memory for an all zero data pattern  
prior to electrical erase. The system is not required to pro-  
vide any controls or timings during these operations. Table 5  
on page 18 shows the address and data requirements for  
the chip erase command sequence.  
Any commands written to the chip during the Embedded  
Erase algorithm are ignored. Note that a hardware reset  
during the chip erase operation immediately terminates the  
operation. The Chip Erase command sequence should be  
reinitiated once the device has returned to reading array  
data, to ensure data integrity The system can determine the  
status of the erase operation by using DQ7, DQ6, DQ2, or  
RY/BY#. See Write Operation Status‚ on page 19 for infor-  
mation on these status bits. When the Embedded Erase al-  
gorithm is complete, the device returns to reading array data  
and addresses are no longer latched.  
During the unlock bypass mode, only the Unlock Bypass  
Program and Unlock Bypass Reset commands are valid. To  
exit the unlock bypass mode, the system must issue the  
two-cycle unlock bypass reset command sequence. The first  
cycle must contain the data 90h; the second cycle the data  
00h. Addresses are don’t cares. The device then returns to  
reading array data.  
Figure 3‚ on page 16 illustrates the algorithm for the program  
operation. See Erase/Program Operations‚ on page 30 for  
parameters, and Figure 17‚ on page 31 for timing diagrams.  
Figure 4‚ on page 17 illustrates the algorithm for the erase  
operation. See Erase/Program Operations‚ on page 30 for  
parameters, and to Figure 18 for timing diagrams.  
Sector Erase Command Sequence  
Sector erase is a six bus cycle operation. The sector erase  
command sequence is initiated by writing two unlock cycles,  
followed by a set-up command. Two additional unlock write  
cycles are then followed by the address of the sector to be  
erased, and the sector erase command. Table 5 on page 18  
shows the address and data requirements for the sector  
erase command sequence.  
START  
Write Program  
Command Sequence  
The device does not require the system to preprogram the  
memory prior to erase. The Embedded Erase algorithm au-  
tomatically programs and verifies the sector for an all zero  
data pattern prior to electrical erase. The system is not re-  
quired to provide any controls or timings during these opera-  
tions.  
Data Poll  
from System  
Embedded  
Program  
algorithm  
in progress  
Verify Data?  
No  
After the command sequence is written, a sector erase  
time-out of 50 µs begins. During the time-out period, addi-  
tional sector addresses and sector erase commands may be  
written. Loading the sector erase buffer may be done in any  
sequence, and the number of sectors may be from one sec-  
tor to all sectors. The time between these additional cycles  
must be less than 50 µs, otherwise the last address and  
command might not be accepted, and erasure may begin. It  
is recommended that processor interrupts be disabled dur-  
ing this time to ensure all commands are accepted. The in-  
terrupts can be re-enabled after the last Sector Erase  
command is written. If the time between additional sector  
erase commands can be assumed to be less than 50 µs, the  
system need not monitor DQ3. Any command other than  
Sector Erase or Erase Suspend during the time-out pe-  
riod resets the device to reading array data. The system  
must rewrite the command sequence and any additional  
sector addresses and commands.  
Yes  
No  
Increment Address  
Last Address?  
Yes  
Programming  
Completed  
Note: See Table 5 for program command sequence.  
Figure 3. Program Operation  
16  
Am29SL400C  
Am29SL400C_00_A6 January 23, 2007  
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