AMD
TAXI Technical Information Publication #89-15
S u b je c t : Ge n e ra l De vic e In fo rm a t io n fo r 1 2 5 /1 7 5 MHz TAXIc h ip s
This T.I.P. provides general information about the design and manufacturing of the
125 MHz and 175 MHz TAXIchips. The information is separated into three categories:
Design, Wafer Fab, and Assembly/Packaging.
De s ig n :
Transmitter (TX)
Receiver (RX)
Product P/N:
Am7968-125
Am7968-175
Am7969-125
Am7969-175
Die Number:
4768
4769
Chip Dimensions:
170 x 167 mils2
196 x 187 mils2
# NPN Transistors:
# PNP Transistors:
# Resistors:
3386
14
2504
87
4384
24
3556
76
# Diodes:
Equiv. Gate Count:
I/O Schematics:
Supply Currents:
595
720
See TAXI TIP #89-12
Typical Values (mA), VCC = 5.5 V Process=Nominal, CD 028 package,
Temp. forced with moving air flow (approx. thetaJMA= 20°C/W)
–55°C
0°C
25°C
70°C
125°C
Transmitter:
Receiver:
230
272
215
250
203
237
187
212
178
182
Wa fe r Fa b :
Location:
Fab 2A, San Antonio, TX (formerly Fab 11) Process ID:
Bipolar IMOX–S2: 402L–1156
Metal One:
TiW (barrier metal): 1800 A nom. thickness AlCu: 1.0% Cu,
8000 A nom. thickness Pitch = 4 µ
Metal Two:
AlCu: 1.0% Cu, 15500 A nom. thickness Pitch = 8 µ
Passivation:
Silox/Nitride dual layer.
7500 A nominal thickness Nitride: 6800 A nominal thickness
120
TAXIchip Integrated Circuits Technical Manual
AMD [ AMD ]
