Revision 3.03 – May 25, 2007
S1220 – SONET/SDH/ATM Quad OC-3/12
with Clock Data Recovery (CDR)
Advance Data Sheet
ELECTRICAL SPECIFICATIONS
Table 15. Absolute Maximum Ratings
The following are the absolute maximum stress ratings for the S1220 device. Stresses beyond those listed may cause permanent damage to
the device. Absolute maximum ratings are stress ratings only, and operation of the device at the maximums stated, or any other conditions
beyond those indicated in the “Recommended Operating Conditions” of the document, are not inferred. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Parameter
Min
-65
0
Typ
Max
150
3.46
1.5
Units
°C
V
Conditions
Storage Temperature
Voltage on VDDH, VDDHIO with Respect to GND
Voltage on VDDI, VDD with Respect to GND
Voltage on any LVCMOS Input Pin
VDDHIO = 3.3V
0
V
-0.5
0
3.6
V
Voltage on any LVPECL Input Pin
VDDH
16
V
LVCMOS Output Sink Current
mA
mA
mA
Output Low Voltage
Output High Voltage
LVCMOS Output Source Current
16
High Speed LVPECL Output Source Current
24
Electrostatic Discharge (ESD) Sensitivity Rating - Human Body Model (HBM):
The S1220 is rated to the following ESD voltages based upon JEDEC standard: JESD22-A114-B
1. CLASS 1C - All pins are rated at or above 1000 volts.
Adherence to standards for ESD protection should be taken during the handling of the devices to ensure that the devices are not damaged. The
standards to be used are defined in ANSI standard ANSI/ESD S20.20-1999, “Protection of Electrical and Electronic Parts, Assemblies and
Equipment.” Contact your local FAE or sales representative for applicable ESD application notes.
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DS2018
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AMCC [ APPLIED MICRO CIRCUITS CORPORATION ]
