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EP1AGX50DF780C6 参数 Datasheet PDF下载

EP1AGX50DF780C6图片预览
型号: EP1AGX50DF780C6
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 50160 CLBs, 640MHz, PBGA780, 29 X 29 MM, 1 MM PITCH, FBGA-780]
分类和应用: 现场可编程门阵列可编程逻辑LTE时钟
文件页数/大小: 296 页 / 3505 K
品牌: ALTERA [ ALTERA CORPORATION ]
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Temperature Sensing Diode  
Table 3–5 shows the specifications for bias voltage and current of the  
Arria GX temperature sensing diode.  
Table 3–5. Temperature-Sensing Diode Electrical Characteristics  
Parameter  
Minimum  
Typical  
Maximum  
Unit  
IBIAS high  
80  
8
100  
10  
120  
12  
0.9  
μA  
μA  
V
IBIAS low  
VBP - VBN  
VBN  
0.3  
0.7  
V
Series resistance  
3
Ω
The temperature-sensing diode works for the entire operating range, as  
shown in Figure 3–2.  
Figure 3–2. Temperature vs. Temperature-Sensing Diode Voltage  
0.95  
0.90  
0.85  
0.80  
0.75  
0.70  
0.65  
0.60  
0.55  
0.50  
0.45  
0.40  
100 μA Bias Current  
10 μA Bias Current  
Voltage  
(Across Diode)  
–55  
–30  
–5  
20  
45  
70  
95  
120  
Temperature (˚C)  
Altera Corporation  
May 2008  
3–11  
Arria GX Device Handbook, Volume 1  
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