3
Typical Parameters at TC = 25°C
Part Number
HSMP-
Series Resistance
Carrier Lifetime
Reverse Recovery Time
Trr (ns)
Total Capacitance
CT (pF)
RS (Ω)
τ (ns)
381x
75
1500
300
0.27 @ 50 V
f = 1 MHz
Test Conditions
IF = 1 mA
f = 100 MHz
IF = 50 mA
IR = 250 mA
VR = 10 V
IF = 20 mA
90% Recovery
Typical Parameters at TC = 25°C (unless otherwise noted), Single Diode
120
110
100
90
10000
1000
100
10
0.45
0.40
0.35
0.30
0.25
0.20
Diode Mounted as a
Series Attenuator
in a 50 Ohm Microstrip
and Tested at 123 MHz
TA = +85°C
T
A = +25°C
A = –55°C
T
1 MHz
80
70
30 MHz
60
50
frequency>100 MHz
1
0.01
40
1000
0.15
0.1
1
10
100
100
10
0
2
4
6
8
10 12 14 16 18 20
I
– FORWARD BIAS CURRENT (mA)
REVERSE VOLTAGE (V)
DIODE RF RESISTANCE (OHMS)
F
Figure 1. RF Capacitance vs. Reverse
Bias.
Figure 3. 2nd Harmonic Input
Intercept Point vs. Diode RF
Resistance.
Figure 2. RF Resistance vs. Forward
Bias Current.
100
10
Typical Applications for Multiple Diode Products
VARIABLE BIAS
1
RF IN/OUT
INPUT
0.1
125°C 25°C –50°C
0.01
0
0.2
0.4
0.6
0.8
1.0 1.2
V
– FORWARD VOLTAGE (mA)
F
Figure 4. Forward Current vs.
Forward Voltage.
FIXED
BIAS
VOLTAGE
Figure 5. Four Diode π Attenuator. See Application Note 1048
for Details.
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
