7
I
OH
– HIGH LEVEL OUTPUT CURRENT –
µA
I
F
- FOWARD CURRENT - mA
V
CC
= 5.5 V
V
O
= 5.5 V
I
F
= 250
µA
10
V
OL
– LOW LEVEL OUTPUT VOLTAGE – V
15
0.5
V
CC
= 5.5 V
I
F
= 5.0 mA
0.4
I
O
= 12.8 mA
I
O
= 16 mA
1000
100
+
V
F
_
I
F
T
A
= 25°C
10
0.3
1.0
5
0.1
0.2
I
O
= 9.6 mA
0.1
I
O
= 6.4 mA
0.01
0
-60
-40
-20
0
20
40
60
80
100
-60
-40
-20
0
20
40
60
80
100
0.001
1.1
1.2
1.3
1.4
1.5
1.6
T
A
– TEMPERATURE –
°C
T
A
– TEMPERATURE –
°C
V
F
- FOWARD VOLTAGE - VOLTS
Figure 2. High Level Output
Current vs. Temperature.
6
V
CC
= 5 V
T
A
= 25°C
Figure 3. Low Level Output
Voltage vs. Temperature.
80
I
OL
– LOW LEVEL OUTPUT CURRENT – mA
V
CC
= 5.0 V
V
OL
= 0.6 V
60
I
F
= 10 mA, 15 mA
40
I
F
= 5.0 mA
20
Figure 4. Input Diode Forward
Characteristic.
5
V
O
– OUTPUT VOLTAGE – V
4
R
L
= 350Ω
3
R
L
= 1KΩ
2
R
L
= 4KΩ
1
0
0
1
2
3
4
5
6
0
-60
-40
-20
0
20
40
60
80
100
I
F
– FORWARD INPUT CURRENT – mA
T
A
– TEMPERATURE –
°C
Figure 5. Output Voltage vs.
Forward Input Current.
Figure 6. Low Level Output
Current vs. Temperature.
PULSE GEN.
Z
O
= 50
Ω
t
r
= 5 ns
I
F
1
V
CC
8
+5 V
7
R
L
IN
2
OUTPUT
V
O
6
100
3
R
M
4
GND
V
CC
= 5.0 V
I
F
= 7.5 mA
t
PLH
, R
L
= 4 KΩ
t
PHL
, R
L
= 350
Ω
1 KΩ
4 KΩ
t
P
– PROPAGATION DELAY – ns
0.1
µF
BYPASS
C
L
*
80
5
60
*C
L
IS APPROXIMATELY 15 pF WHICH INCLUDES
PROBE AND STRAY WIRING CAPACITANCE.
I
F
= 7.50 mA
INPUT
I
F
t
PHL
OUTPUT
V
O
t
PLH
I
F
= 3.75 mA
40
t
PLH
, R
L
= 1 KΩ
t
PLH
, R
L
= 350
Ω
20
0
-60
-40
-20
0
20
40
60
80
100
T
A
– TEMPERATURE –
°C
1.5 V
Figure 7. Test Circuit for t
PHL
and t
PLH
(See Note 3).
Figure 8. Propagation Delay vs.
Temperature.
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
