ATF-55143 Typical Performance Curves,
continued
28
25°C
-40°C
85°C
2.0
25°C
-40°C
85°C
25
24
23
22
21
23
GAIN (dB)
Fmin (dB)
1.5
OIP3 (dBm)
18
1.0
13
0.5
20
25°C
-40°C
85°C
8
0
1
2
3
4
5
6
FREQUENCY (GHz)
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
19
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 21. Gain vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
[1]
16
14
12
10
6
4
2
0
-2
-4
-6
25°C
-40°C
85°C
Figure 22. Fmin vs. Frequency and
Temperature at 2.7V, 10 mA.
16
15
14
13
12
11
10
25°C
-40°C
85°C
Figure 23. OIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
[1]
0
1
2
3
4
5
6
P1dB (dBm)
IIP3 (dBm)
8
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 24. IIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
[1]
Figure 25. P1dB vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
[1,2]
Notes:
1. Measurements at 2 GHz were made on a
fixed tuned production test board that was
tuned for optimal OIP3 match with reasonable
noise figure at 2.7 V, 10 mA bias. This circuit
represents a trade-off between optimal noise
match, maximum OIP3 match and a realizable
match based on production test board
requirements. Measurements taken above
and below 2 GHz were made using a double
stub tuner at the input tuned for low noise
and a double stub tuner at the output tuned
for maximum OIP3. Circuit losses have been
de-embedded from actual measurements.
2. P1dB measurements are performed with
passive biasing. Quiescent drain current, I
dsq
,
is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or
decrease depending on frequency and dc bias
point. At lower values of I
dsq
, the device is
running close to class B as power output
approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency)
when compared to a device that is driven by a
constant current source as is typically done
with active biasing. As an example, at a V
DS
=
2.7V and I
dsq
= 5 mA, I
d
increases to 15 mA as
a P1dB of +14.5 dBm is approached.
6
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
