ATF-55143 Typical Performance Curves
30
1.2
1.0
0.8
GAIN (dB)
Fmin (dB)
27
25
23
21
19
17
15
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
25
20
0.6
0.4
15
10
2V, 10 mA
2.7V, 10 mA
0.2
0
2V, 10 mA
2.7V, 10 mA
OIP3 (dBm)
2V, 10 mA
2.7V, 10 mA
5
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 6.
Gain vs. Bias over Frequency.
[1]
Figure 7. Fmin vs. Frequency and Bias.
Figure 8. OIP3 vs. Bias over Frequency.
[1]
15
16
21
20
10
P1dB (dBm)
IIP3 (dBm)
14
19
12
GAIN (dB)
5
18
17
0
2V, 10 mA
2.7V, 10 mA
10
2V, 10 mA
2.7V, 10 mA
16
15
2V
2.7V
3V
-5
0
1
2
3
4
5
6
FREQUENCY (GHz)
8
0
1
2
3
4
5
6
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
I
ds
(mA)
Figure 9. IIP3 vs. Bias over Frequency.
[1]
Figure 10. P1dB vs. Bias over Frequency.
[1,2]
Figure 11. Gain vs. I
ds
and V
ds
at 2 GHz.
[1]
0.60
0.55
0.50
OIP3 (dBm)
Fmin (dB)
35
33
31
IIP3 (dBm)
2V
2.7V
3V
16
14
12
10
8
6
4
2
35
0
0
5
10
15
20
25
2V
2.7V
3V
0.45
0.40
0.35
0.30
0.25
0.20
0
5
10
15
20
25
2V
2.7V
3V
29
27
25
23
21
30
35
19
0
5
10
15
20
25
30
30
35
I
ds
(mA)
I
ds
(mA)
I
ds
(mA)
Figure 12. Fmin vs. I
ds
and V
ds
at 2 GHz.
Figure 13. OIP3 vs. I
ds
and V
ds
at 2 GHz.
[1]
Figure 14. IIP3 vs. I
ds
and V
ds
at 2 GHz.
[1]
Notes:
1. Measurements at 2 GHz were made on a
fixed tuned production test board that was
tuned for optimal OIP3 match with reasonable
noise figure at 2.7 V, 10 mA bias. This circuit
represents a trade-off between optimal noise
match, maximum OIP3 match and a realizable
match based on production test board
requirements. Measurements taken above
and below 2 GHz were made using a double
stub tuner at the input tuned for low noise
and a double stub tuner at the output tuned
for maximum OIP3. Circuit losses have been
de-embedded from actual measurements.
2. P1dB measurements are performed with
passive biasing. Quiescent drain current, I
dsq
,
is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or
decrease depending on frequency and dc bias
4
point. At lower values of I
dsq
, the device is
running close to class B as power output
approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency)
when compared to a device that is driven by a
constant current source as is typically done
with active biasing. As an example, at a V
DS
=
2.7V and I
dsq
= 5 mA, I
d
increases to 15mA as
a P1dB of +14.5 dBm is approached.
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
