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ATF-55143-TR1 参数 Datasheet PDF下载

ATF-55143-TR1图片预览
型号: ATF-55143-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: 安捷伦ATF- 55143低噪声增强模式伪HEMT的表面贴装塑料封装 [Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package]
分类和应用: 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
文件页数/大小: 21 页 / 172 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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ATF-55143 Typical Scattering Parameters,
V
DS
= 2V, I
DS
= 15 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
S
11
Mag.
0.997
0.953
0.873
0.856
0.759
0.695
0.681
0.621
0.578
0.536
0.541
0.554
0.574
0.594
0.63
0.703
0.757
0.793
0.818
0.841
0.863
0.856
0.871
0.913
Ang.
-7.1
-34.5
-58.8
-64.6
-89.3
-106.2
-110.2
-129.3
-147.4
177.3
145.1
119.1
97.0
75.5
55.9
37.3
21.1
7.1
-8.2
-23.8
-38.1
-51.2
-60.2
-70.4
dB
22.33
21.82
20.86
20.58
19.14
18.06
17.8
16.62
15.54
13.71
12.09
10.59
9.3
8.13
7.12
6.14
4.92
3.79
2.77
1.76
0.32
-1.29
-2.66
-3.8
S
21
Mag.
13.074
12.333
11.042
10.693
9.059
7.998
7.762
6.773
5.985
4.850
4.020
3.384
2.917
2.549
2.271
2.028
1.762
1.547
1.376
1.225
1.038
0.862
0.736
0.646
S
12
Ang.
174.4
153.0
134.4
130.3
112.2
100.0
97.2
83.9
71.8
49.4
28.4
9.0
-9.1
-27.0
-44.6
-63.5
-81.7
-98.5
-115.9
-134.3
-152.5
-168.8
177.0
161.7
S
22
Ang.
85.7
69.4
56.3
53.3
41.6
34.4
32.8
25.6
19.4
7.9
-3.0
-12.7
-23.0
-33.1
-40.4
-53.2
-65.3
-76.9
-89.5
-102.7
-116.3
-128.0
-138.6
-151.9
Mag.
0.006
0.027
0.044
0.047
0.060
0.068
0.070
0.076
0.082
0.091
0.096
0.101
0.105
0.106
0.113
0.121
0.123
0.125
0.125
0.125
0.118
0.111
0.109
0.105
Mag.
0.752
0.712
0.654
0.636
0.560
0.509
0.498
0.443
0.390
0.295
0.225
0.183
0.150
0.101
0.047
0.078
0.162
0.231
0.275
0.339
0.438
0.524
0.586
0.636
Ang.
-4.6
-22.1
-36.7
-39.6
-51.8
-59.0
-60.5
-67.5
-73.6
-87.3
-104.3
-120.8
-138.4
-149.7
-175.2
82.0
51.1
31.3
12.8
-5.5
-21.0
-32.0
-44.4
-58.1
MSG/MAG
dB
33.38
26.60
24.00
23.57
21.79
20.70
20.45
19.50
18.63
17.27
16.22
10.47
9.34
8.32
7.99
8.33
8.19
7.98
7.68
7.43
6.85
5.58
5.27
6.28
Typical Noise Parameters,
V
DS
= 2V, I
DS
= 15 mA
Freq
GHz
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
MSG/MAG and |S
21
|
2
(dB)
F
min
dB
0.21
0.25
0.26
0.4
0.41
0.48
0.57
0.7
0.86
0.99
1.03
1.16
1.35
1.49
1.62
Γ
opt
Mag.
0.627
0.56
0.53
0.51
0.5
0.41
0.35
0.22
0.2
0.23
0.23
0.29
0.35
0.43
0.54
Γ
opt
Ang.
18.7
23.6
27.3
49.7
52.6
62.3
80.4
118.4
-176.5
-140.5
-134.6
-99.3
-69.3
-47.9
-30.8
R
n/50
0.1
0.1
0.1
0.09
0.09
0.09
0.08
0.06
0.06
0.08
0.08
0.14
0.25
0.39
0.57
G
a
dB
25.41
23.47
23.02
19.44
19.09
17.81
16.17
14.25
12.6
11.77
11.6
10.86
10.22
9.48
8.47
40
35
30
25
20
15
10
5
0
-5
-10
0
5
10
FREQUENCY (GHz)
15
20
|S
21
|
2
MSG
Figure 27. MSG/MAG and |S
21
|
2
vs.
Frequency at 2V, 15 mA.
Notes:
1. F
min
values at 2 GHz and higher are based on measurements while the F
mins
below 2 GHz have been extrapolated. The F
min
values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
min
is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
8