ATF-55143-TR1 参数 Datasheet PDF下载

ATF-55143 Electrical Specifications

T

A

= 25°C, RF parameters measured in a test circuit for a typical device

Symbol

Vgs

Vth

Idss

Gm

Igss

NF

Ga

OIP3

P1dB

Parameter and Test Condition

Operational Gate Voltage

Threshold Voltage

Saturated Drain Current

Transconductance

Gate Leakage Current

Noise Figure

[1]

Associated Gai

[1]

n

Output 3

rd

Order

Intercept Point

[1]

1dB Compressed

Output Power

[1]

f = 2 GHz

f = 900 MHz

f = 2 GHz

f = 900 MHz

f = 2 GHz

f = 900 MHz

f = 2 GHz

f = 900 MHz

Vds = 2.7V, Ids = 10 mA

Vds = 2.7V, Ids = 2 mA

Vds = 2.7V, Vgs = 0V

Vds = 2.7V, gm =

∆Idss/ ∆Vgs;

∆Vgs

= 0.75 – 0.7 = 0.05V

Vgd = Vgs = -2.7V

Vds = 2.7V, Ids = 10 mA

Vds = 2.7V, Ids = 10 mA

Vds = 2.7V, Ids = 10 mA

Vds = 2.7V, Ids = 10 mA

Vds = 2.7V, Ids = 10 mA

Vds = 2.7V, Ids = 10 mA

Vds = 2.7V, Ids = 10 mA

Vds = 2.7V, Ids = 10 mA

Units

V

V

µA

mmho

µA

dB

dB

dB

dB

dBm

dBm

dBm

dBm

Min.

0.3

0.18

—

110

—

—

—

15.5

—

22.0

—

—

—

Typ.

[2]

0.47

0.37

0.1

220

—

0.6

0.3

17.7

21.6

24.2

22.3

14.4

14.2

Max.

0.65

0.53

3

285

95

0.9

—

18.5

—

—

—

—

—

Notes:

1. Measurements obtained using production test board described in Figure 5.

2. Typical values determined from a sample size of 500 parts from 6 wafers.

Input

50 Ohm

Transmission

Line Including

Gate Bias T

(0.3 dB loss)

Input

Matching Circuit

Γ_mag

= 0.4

Γ_ang

= 83°

(0.3 dB loss)

DUT

Output

Matching Circuit

Γ_mag

= 0.5

Γ_ang

= -26°

(1.2 dB loss)

50 Ohm

Transmission

Line Including

Drain Bias T

(0.3 dB loss)

Output

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit

represents a trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses

have been de-embedded from actual measurements.

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