DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(VDD = 5.0V ±10%; -55°C < TC < +125°C)
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
VIH
High-level input voltage
(CMOS)
(CMOS)
0.7VDD
V
VIL
VOL
VOL
VOH
VOH
Low-level input voltage
Low-level output voltage
Low-level output voltage
High-level output voltage
High-level output voltage
Input capacitance
0.3VDD
0.4
V
V
IOL = 8mA, VDD = 4.5V (TTL)
IOL = 200mA, VDD = 4.5V (CMOS)
IOH = -4mA, VDD = 4.5V (TTL)
IOH = -200mA, VDD = 4.5V (CMOS)
¦ = 1MHz @ 0V
0.05
V
2.4
V
4.45
V
1
25
25
pF
CIN
1
Bidirectional I/O capacitance
¦ = 1MHz @ 0V
pF
CIO
IIN
Input leakage current
VIN = VDD and VSS
-10
-10
10
10
mA
mA
IOZ
Three-state output leakage current
VO = VDD and VSS
VDD = 5.5V
G = 5.5V
2,3
Short-circuit output current
VDD = 5.5V, VO = VDD
VDD = 5.5V, VO = 0V
90
mA
mA
IOS
-90
IDD(OP)4,5
IDD(OP)4,6
IDD(OP)4,5
IDD(OP)4,6
Supply current operating (both ports)
@ 22.2MHz
CMOS inputs (IOUT = 0)
VDD = 5.5V
300
mA
mA
mA
mA
mA
Supply current operating (single port)
@ 22.2 MHz
CMOS inputs (IOUT = 0)
VDD = 5.5V
150
275
138
1
Supply current operating (both ports)
@ 18.2MHz
CMOS inputs (IOUT = 0)
VDD = 5.5V
Supply current operating (single port)
@ 18.2 MHz
CMOS inputs (IOUT = 0)
VDD = 5.5V
IDD(SB)4
Supply current standby
CMOS inputs (IOUT = 0)
CE = VDD - 0.5, VDD = 5.5V
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.
1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. V = 5.5V, V = 0V.
IH
IL
5. I (OP) derates at 6.4mA/MHz.
DD
6. I (OP) derates at 3.4mA/MHz.
DD
6
AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
