ADF4106
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter
AV
DD
to GND
AV
DD
to DV
DD
V
P
to GND
V
P
to AV
DD
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
IN
, RF
IN
A, RF
IN
B to GND
RF
IN
A to RF
IN
B
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Maximum Junction Temperature
TSSOP θ
JA
Thermal Impedance
LFCSP θ
JA
Thermal Impedance
(Paddle Soldered)
Reflow Soldering
Peak Temperature
Time at Peak Temperature
Transistor Count
CMOS
Bipolar
1
Data Sheet
Rating
–0.3 V to + 3.6 V
–0.3 V to + 0.3 V
–0.3 V to + 5.8 V
–0.3 V to + 5.8 V
–0.3 V to V
DD
+ 0.3 V
–0.3 V to V
P
+ 0.3 V
–0.3 V to V
DD
+ 0.3 V
±320 mV
–40°C to +85°C
–65°C to +125°C
150°C
112°C/W
30.4°C/W
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
ESD CAUTION
260°C
40 sec
6425
303
GND = AGND = DGND = 0 V.
Rev. E | Page 6 of 24
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