MIL-PRF-38535K
APPENDIX A
TABLE A-I. Testing guidelines for changes identified as major. - Continued.
Major changes
Testing per group A, B, C, D, E herein or TM 5005 of MIL-
STD-883 (All electrical parameters in accordance with the
device specification or drawing 1/)
m.
n.
Implementation of test methods
Critical documents (see A.4.8.1.3b)
Fab move
Notify qualifying activity (may involve test demonstration)
Notify qualifying activity (may involve test demonstration)
Group A and C
o.
p.
Assembly move
Group D in accordance with each package family (see
A.3.1.3.30) prior to ship
q.
r.
Test facility move
Notify qualifying activity
Scribe/die separation
5 SEM photographs of randomly selected die showing one
full edge of die front and back
s.
t.
Qualification/QCI procedures
Passivation for RHA
Notify qualifying activity
Group A, E, C-1, and glass integrity test if current density is
over 2 x 105
u.
Diffusion profile for RHA
Group A, E, and C-1 deltas (variables only when deltas are
required).
v.
w.
x.
Sinter/anneal for RHA
Group A, E, C-1, and B-5
Notify qualifying activity
Modification of programming algorithms
Flip chip devices:
Solder bump materials/dimension,
Wafer bumping process,
Notify qualifying activity and document in QM plan/PIDTP
(group A, B, C and D as applicable)
Underfill process and materials selection
1/ This table is for class level B subgroups only. For class level S, use the equivalent class level S subgroups.
A.3.5.5.1 Metallization thickness. For class level S microcircuits the metallization thickness shall be adequate to
satisfy the current density requirements of A.3.5.5.
A.3.5.5.2 Internal wire size and material. For class level S microcircuits, the internal wire diameter shall be 0.001
inch minimum (0.0254 mm) or of sufficient diameter to meet the minimum fusing requirements and bond pull strength
requirements with the approval of qualifying activity. The internal lead wire shall be the same metal as the die
metallization.
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ACTEL [ Actel Corporation ]
