MIL-PRF-38535K
APPENDIX C
C.3.4.1.3 Wafer acceptance plan. The TRB shall develop and demonstrate a wafer acceptance plan based on electrical and
radiation measurement of parametric monitors (PMs). PMs shall be used to determine wafer and wafer lot uniformity and latch-
up immunity (when specified). Further testing of the actual device to table C-I may be required. As an option to actual device
testing, after initial establishment of device specification and device post-irradiation parameter limits (PIPL), the following
procedures are presented as examples for the specified radiation environments:
a. Latch-up: The PM should utilize worst case latch-up structures to determine latch-up holding voltage at maximum
temperature. The holding voltage shall be greater than the maximum rated voltage.
b. SEE: The PM should utilize SEE structures such as cross-coupling resistors to memory cells to assure critical
parameters agree with worst case acceptance criteria.
c. Dose rate: The PM should utilize structures to ensure rail span collapse does not cause upset or burnout or both and
that the metallization resistivity, contact resistance, via resistance, epitaxial layer (EPI), substrate resistivity, and
minority carrier lifetime specifications are met.
d. Total ionizing dose: The PM should utilize structures such as capacitors and transistors to ensure that critical
parameters agree with worst case PIPL values.
C.3.5 On-site validation. In addition to the requirements in 3.4.1.3 the on-site validation shall include RHA test procedures
and RHA data reduction.
C.3.5.1 Technology validation. The general requirements for a technology validation are defined in 3.4.1.4. For RHA
technology the following items shall be added:
a. Radiation test procedures.
b. RHA data reduction (e.g., interface state and oxide trapped charge separation).
C.3.6 RHA packages. Packages used for RHA microcircuits shall be characterized for effects that may influence the
hardness of packaged product. Characterization shall include impedance of the power and ground distribution network,
impedance contributions of bond wires and die attach, and the impedance associated with any passive elements included as
integral parts of the package. Qualification of the same die in different packages shall require demonstration either by test or
similarity analysis.
C.3.7 Demonstration vehicles. The demonstration vehicles shall be as described in H.3.4.1.3. Each demonstration vehicle
shall operate and perform in compliance with the device specification and to the RHACL for a radiation hardened process
(which shall be submitted to the qualifying activity) and shall be manufactured in packages which have been tested to C.3.6
herein prior to use for qualification. For a technology that has die as its primary product, the demonstration vehicle shall be
suitably packaged to allow evaluation of the technology without adversely affecting the outcome of the tests.
C.3.7.1 Qualification test plan. See H.3.4.2. Note that for RHA, the die traceability shall be to the individual wafer.
C.3.7.2 Qualification test report. For RHA testing, the pre and post irradiation, electrical parameters and the transient and
SEE test conditions shall be retained by the manufacturer.
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ACTEL [ Actel Corporation ]
