MIL-PRF-38535K
APPENDIX C
(iii) Ion/Ioff (leakage current).
(iv) Propagation delay time (tPD); A test structure in the form of a functional circuit such as an inverter or
register chain shall be available to support this measurement.
(v) Field transistor leakage; Field transistor leakage for the minimum design/layout rules.
(2) Bipolar parameters. The bipolar parameters should be those found in H.3.2.1.3.2 c and shall be measured as a
function of total ionizing dose and neutron fluence (as appropriate).
(3) Gallium arsenide (GaAs) parameters. The following parameters should be measured as a function of total ionizing
dose and neutron/proton fluence (as appropriate).
(a) Sheet resistance.
(b) Isolation; An ohmic transmission line structure should be included to measure contact resistance and transfer
length.
(c) FAT FET; A long length gate FET suitable for the measurement of Schottky barrier height, ideality factor,
carrier concentration, and channel depth should be available.
(d) GaAs FET parameters; see H.3.2.1.3.2 d.
(4) Radiation hardness assurance. When RHA is a requirement of the technology, the PM shall include test
structures to monitor the following phenomena, as applicable:
(a) Dose-rate latch-up.
(b) Dose-rate upset.
(c) Single-event effects (SEE).
(d) Total ionizing dose.
(e) Displacement damage from neutron or proton irradiation.
(5) Other RHA considerations. In addition, test structures to monitor and characterize radiation response mechanisms
and for linear circuit applications shall be included (as appropriate). These structures would include but not be
limited to:
(a) Matched transistor pairs for offset current and voltage characterization.
(b) Annular and dual or multi-edged transistor sets for sub threshold I-V characterization.
(c) Four contact devices for charge pumping measurements.
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ACTEL [ Actel Corporation ]
