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5962-0421901QUA 参数 Datasheet PDF下载

5962-0421901QUA图片预览
型号: 5962-0421901QUA
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 250000 Gates, CMOS, CPGA624, CERAMIC, CGA-624]
分类和应用: 可编程逻辑
文件页数/大小: 217 页 / 1554 K
品牌: ACTEL [ Actel Corporation ]
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MIL-PRF-38535K  
APPENDIX C  
(iii) Ion/Ioff (leakage current).  
(iv) Propagation delay time (tPD); A test structure in the form of a functional circuit such as an inverter or  
register chain shall be available to support this measurement.  
(v) Field transistor leakage; Field transistor leakage for the minimum design/layout rules.  
(2) Bipolar parameters. The bipolar parameters should be those found in H.3.2.1.3.2 c and shall be measured as a  
function of total ionizing dose and neutron fluence (as appropriate).  
(3) Gallium arsenide (GaAs) parameters. The following parameters should be measured as a function of total ionizing  
dose and neutron/proton fluence (as appropriate).  
(a) Sheet resistance.  
(b) Isolation; An ohmic transmission line structure should be included to measure contact resistance and transfer  
length.  
(c) FAT FET; A long length gate FET suitable for the measurement of Schottky barrier height, ideality factor,  
carrier concentration, and channel depth should be available.  
(d) GaAs FET parameters; see H.3.2.1.3.2 d.  
(4) Radiation hardness assurance. When RHA is a requirement of the technology, the PM shall include test  
structures to monitor the following phenomena, as applicable:  
(a) Dose-rate latch-up.  
(b) Dose-rate upset.  
(c) Single-event effects (SEE).  
(d) Total ionizing dose.  
(e) Displacement damage from neutron or proton irradiation.  
(5) Other RHA considerations. In addition, test structures to monitor and characterize radiation response mechanisms  
and for linear circuit applications shall be included (as appropriate). These structures would include but not be  
limited to:  
(a) Matched transistor pairs for offset current and voltage characterization.  
(b) Annular and dual or multi-edged transistor sets for sub threshold I-V characterization.  
(c) Four contact devices for charge pumping measurements.  
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