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5962-0421901QUA 参数 Datasheet PDF下载

5962-0421901QUA图片预览
型号: 5962-0421901QUA
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 250000 Gates, CMOS, CPGA624, CERAMIC, CGA-624]
分类和应用: 可编程逻辑
文件页数/大小: 217 页 / 1554 K
品牌: ACTEL [ Actel Corporation ]
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MIL-PRF-38535K  
APPENDIX C  
TABLE C-I. Group E (RHA) TCI/QCI test for class Q, class V and class Y. –continued.  
5/ In accordance with inspection lot. If one part fails, seven additional parts may be added to the test sample with no additional failures  
allowed, 18(1).  
6/ In accordance with wafer lot. If one part fails, seven additional parts may be added to the test sample with no additional failures  
allowed, 18(1).  
7/ Parts used for one subgroup test may not be used for other subgroups, but may be used for higher levels in the same subgroup.  
For subgroup 2, total dose exposure shall not be considered cumulative unless testing is performed within the time limits of the test  
method.  
8/ In accordance with inspection lot. If one part fails, 16 additional parts may be added to the test sample with no additional failures  
allowed, 38(1).  
9/ Traceability to the specific wafer is required.  
10/ In accordance with wafer for device types with greater than or equal to 4,000 equivalent transistors/chip selected from the wafer.  
The manufacturer shall define and document sampling procedures. The test structures shall be randomly selected from the wafer.  
An X-ray source may be used on test structures at the wafer level provided correlation has been established between the X-ray and  
the Cobalt-60 source and shall be documented in the QM plan.  
11/ Radiation dose rate upset (Transient irradiation test) test shall be conducted during qualification on first QCI when  
specified in purchase order or contract.  
12/ Radiation dose rate induced latch-up screen test shall be conducted when specified in purchase order or contract. Dose rate  
induced latch-up screen test is not required when radiation induced latch-up is verified to be not possible such as SOI, SOS and  
dielectrically isolated technology devices. If radiation dose rate induced latch-up screen test is required, shall be performed  
screening operation after seal. Test conditions, temperature, and the electrical parameters to be measured pre, post, and during the  
test in accordance with the specified device specification. The PDA for each inspection lot for class V or class Y (class level S)  
devices sublot, screened, shall be 5 percent or one device, whichever is greater.  
13/ When single event effects (SEE) testing is specified in the purchase order or contract, the SEE test shall be performed during initial  
qualification and after any design or process change that may affect SEE response. Destructive SEE (SEB and SEGR) testing shall  
be performed accordance with JEDEC standard JESD57.  
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