(3) The 14 programmed devices shall be subjected to burn-in for 168 hours at T = +125°C. If any functional or
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parametric failures are detected during pre and post burn-in tests, TRB shall review the FA results to reject the wafer
lot, repeat the test after corrective actions, or request for additional testing with no additional failures.
(4) In addition to the 168 hours of burn-in, two ELA programmed devices shall be characterized for thermal stability at
an ambient temperature up to 135°C, by measuring ICC current immediately after oven has reached the specified
temperature and again 40 minutes later. Wafer lots that exhibits thermal runaway (when ICC current rapidly
increases without bound) shall be rejected. (Note: This is a new test implemented with wafer lots fabricated in 2007
and beyond).
g. Two dice are sampled from each wafer. The dice are cross sectioned at the programmable element (antifuse) and a
sample of electron micrographs (XSEM) are inspected. All wafers passing XSEM inspection are ELA processed. Any
construction issues observed will result in the wafer in question being quarantined until its reliability can be assured by
conducting ELA testing (see 4.4.1.f.(1) herein) with devices from the quarantined wafers. XSEM micrographs and
inspection report data shall be maintained by the device manufacturer and shall be made available to the preparing or
acquiring activities.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
Additional reliability qualification test (Enhanced Antifuse Qualification or EAQ) for the programmable element (antifuse) shall be
required for initial qualification and after any process (including programming algorithm) or design changes which may affect the
reliability of the programmable element (antifuse). The test data shall be maintained by the manufacturer and shall be made
available to the preparing or acquiring activity upon request.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a. Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control and
shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005.
b.
T = +125°C, minimum.
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c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-
PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-
STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
a. Constant acceleration method 2001 of MIL-STD-883 shall be performed to condition B for devices built with case
outlines X, Y, Z, U, M, T, and N.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a. End-point electrical parameters shall be as specified in table IIA herein.
b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at
T
= +25°C ± 5°C, after exposure, to the subgroups specified in table IIA herein.
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4.4.5 All required conformance inspection for devices built with case outline Z, T, and N are processed without the solder
column attachment (same as case outline Y and M).
SIZE
STANDARD
5962-04221
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
SHEET
C
10
DSCC FORM 2234
APR 97
ACTEL [ Actel Corporation ]
