e. Programmed device (see 3.2.3.2) - For device class M, subgroups 7, 8A, and 8B tests shall consist of verifying the
functionality of the device. For device classes Q and V, subgroups 7, 8A, and 8B shall include verifying the functionality
of the device. These tests shall have been fault graded in accordance with MIL-STD-883, method 5012.
f. Unprogrammed devices shall be tested for programmability and dc and ac performance compliance to the requirements
of group A, subgroups 1 and 7 (Note: The following steps are done prior to burn-in).
(1) Programming requirements shall be based on either wafer lot or assembly lot. An assembly lot is comprised of one
or more wafers from the wafer lot. Sample size series shall be 8 devices with no programming failures. The
occurrence of one programming failure will allow for an additional 5 samples to be tested with no additional
programming failures allowed 13 (1). The occurrence of a second programming failure will allow for an additional 5
samples to be tested with no additional programming failures allowed 18(2). The occurrence of more than 3
programming failures during this process allows the manufacture to resubmit to a tightened sample size series of
48(3) or 85(7).
(2) Retesting of devices due to failure shall be in accordance with the manufacture’s Quality Control Monitor (QCMON)
for the purpose of determining the failure as True or False as defined in the QCMON.
(3) All units that have passed programming shall be tested for functionality. The occurrence of one DC failure at
functional testing, shall require the manufacture to perform 100% electrical testing of the assembly or wafer lot
followed by a functional test using a sample size series of 45(minimum) programmed devices with no failures. The
assembly or wafer lot shall be rejected if there are functional failures or more than one DC failure.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a. Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control and
shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005.
b.
T = +125°C, minimum.
A
c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-
883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
a. Constant acceleration method 2001 of MIL-STD-883 shall be performed to condition B for devices built with case outline
Y, and condition D for devices built with case outline X.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a. End-point electrical parameters shall be as specified in table IIA herein.
b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25oC ± 5oC,
after exposure, to the subgroups specified in table IIA herein.
4.5 Delta measurements for device class V. Delta measurements, as specified in table IIA, shall be made and recorded
before and after the required burn-in screens and steady-state life tests to determine delta compliance. The electrical
parameters to be measured, with associated delta limits are listed in table IIB. The device manufacturer may, at his option,
either perform delta measurements or within 24 hours after burn-in perform final electrical parameter tests, subgroups 1, 7,
and 9.
SIZE
STANDARD
5962-01515
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
E
SHEET
7
DSCC FORM 2234
APR 97
ACTEL [ Actel Corporation ]
