AP4525GEH-A
P-Channel
f=1.0MHz
12
10000
1000
100
I D = -5 A
V
DS = - 2 0 V
8
C iss
C oss
C rss
4
0
0
10
4
8
12
16
20
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
100us
0.2
0.1
1ms
10ms
100ms
1s
1
0.1
0.05
PDM
t
T
0.02
T A =25 o C
0.1
10s
Duty factor = t/T
0.01
Peak Tj = PDM x Rthja + TA
Single Pulse
Rthja=75℃/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
40
30
20
10
0
VG
V DS =-5V
T j =25 o
C
T j =150 o
C
QG
-4.5V
QGS
QGD
Charge
Q
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7
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