AP4525GEH-A
P-Channel
50
50
40
30
20
10
0
-10V
-7.0V
-5.0V
-4.5V
T C = 150 o
C
T C = 25 o
C
-10V
-7.0V
-5.0V
-4.5V
40
30
20
10
0
V
G = - 3.0V
V
G = - 3.0V
0
2
4
6
8
0
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
200
170
140
110
80
1.6
1.4
1.2
1.0
0.8
I D = -3 A
I D = -5A
C =25 o
C
V
G = -10V
T
Ω
50
20
2
4
6
8
10
25
50
75
100
125
150
T j , Junction Temperature ( o C)
-V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
14
1.6
1.2
0.8
0.4
12
10
8
6
T j =150 o
C
T j =25 o
C
4
2
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
