AP4525GEH-A
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-40
-
-
-
V
V/℃
mΩ
mΩ
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A
VGS=-4.5V, ID=-3A
-
-0.03
RDS(ON)
-
-
-
40
60
-2.5
-
-
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-10V, ID=-5A
VDS=-40V, VGS=0V
VDS=-32V, VGS=0V
VGS=±16V
-0.8
-
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
S
IDSS
uA
uA
uA
nC
nC
nC
ns
-
-1
-25
±30
24
-
-
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
ID=-5A
9
Qgs
Qgd
td(on)
tr
VDS=-20V
2
VGS=-4.5V
5
-
VDS=-20V
8.5
15
27
25
-
ns
ID=-5A
-
ns
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3Ω,VGS=-10V
RD=4Ω
-
ns
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
760 1220
VDS=-25V
150
105
6
-
-
f=1.0MHz
f=1.0MHz
9
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=-12A, VGS=0V
IS=-5A, VGS=0V
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.3
V
20
16
-
-
ns
nC
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
