AP2530AGY-HF
N-Channel
f=1.0MHz
10
300
200
100
0
I D = 3 A
V
DS = 15 V
8
6
4
2
0
C iss
C oss
C rss
1
5
9
13
17
21
25
29
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
0.2
0.1
10
Operation in this
area limited by
RDS(ON)
0.1
100us
0.05
1ms
1
PDM
0.02
t
0.01
T
10ms
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.1
100ms
1s
DC
Rthja = 180℃/W
T A =25 o C
Single Pulse
0.001
0.0001
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
t
td(on) tr
d(off) tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5