AP2530AGY-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=3A
VGS=0V, ID=250uA
30
-
-
-
V
RDS(ON)
-
72
mΩ
VGS=4.5V, ID=2A
-
-
135 mΩ
VGS(th)
gfs
IDSS
IGSS
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=5V, ID=3A
1
-
-
4.6
-
3
V
S
Forward Transconductance
Drain-Source Leakage Current
-
1
uA
nA
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
-
Gate-Source Leakage
-
-
+100
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Qg
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
ID=3A
-
-
-
-
-
-
-
-
-
-
-
2.8
1.2
1.4
5.5
6.5
10
4.5
Qgs
Qgd
td(on)
tr
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
-
-
-
-
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
VGS=10V
VGS=0V
VDS=15V
f=1.0MHz
f=1.0MHz
2
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
200 320
60
40
1
-
-
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=0.9A, VGS=0V
IS=3A, VGS=0V
dI/dt=100A/µs
-
-
-
-
15
8
1.2
V
-
-
ns
nC
Qrr
Reverse Recovery Charge
2
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