AP2530AGY-HF
N-Channel
12
10
T A =25 o C
10V
7.0V
6.0V
5.0V
10V
7.0V
6.0V
5.0V
T A = 150 o
C
10
8
8
6
V G = 4.0V
3.3A
6
V G = 4.0V
4
4
2
2
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
1.4
1.0
0.6
110
100
90
I D = 2 A
I D =3A
T
A =25 o C
V
G =10V
Ω
80
70
3.3
2.68
13.2
60
1.136
50
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.6
1.2
0.8
0.4
0.0
4
3
2
1
0
I D =1mA
T j =25 o C
T j =150 o C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
