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BM29F04-12TC 参数 Datasheet PDF下载

BM29F04-12TC图片预览
型号: BM29F04-12TC
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 512KX8, 120ns, PDSO32]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 29 页 / 196 K
品牌: WINBOND [ WINBOND ]
 浏览型号BM29F04-12TC的Datasheet PDF文件第18页浏览型号BM29F04-12TC的Datasheet PDF文件第19页浏览型号BM29F04-12TC的Datasheet PDF文件第20页浏览型号BM29F04-12TC的Datasheet PDF文件第21页浏览型号BM29F04-12TC的Datasheet PDF文件第23页浏览型号BM29F04-12TC的Datasheet PDF文件第24页浏览型号BM29F04-12TC的Datasheet PDF文件第25页浏览型号BM29F04-12TC的Datasheet PDF文件第26页  
BRIGHT  
Microelectronics  
Inc.  
Preliminary BM29F040  
AC CHARACTERISTICS - for CE Controlled Write Operation  
SYMBOL  
DESCRIPTION  
-75  
-90  
-120 -150 UNITS  
JEDEC  
Standard  
tWC  
tAVAV  
tWLEL  
Write Cycle Time (Note 4)  
70  
0
90  
0
120  
0
150  
0
nS  
nS  
tWS  
WE Setup time  
Address Setup time  
Data Setup time  
Data Hold time  
tAVEL  
tDVEH  
tEHDX  
tEHWH  
tAS  
tDS  
tDH  
tWH  
0
30  
0
0
45  
0
0
50  
0
0
50  
0
nS  
nS  
nS  
nS  
0
0
0
0
WE Hold time  
tWLAX  
tELEH  
tAH  
tCP  
Address Hold time  
45  
35  
45  
45  
50  
50  
50  
50  
nS  
nS  
Pulse Width  
CE  
CE  
tEHEL  
tCPH  
20  
20  
20  
25  
nS  
Pulse Width High  
tOES  
tOEH  
Output Enable Setup time  
0
0
0
0
0
0
0
0
nS  
nS  
nS  
Output Enable Read (Note 4)  
Hold time  
Toggle and Data  
Polling  
10  
10  
10  
10  
tGHEL  
tGHEL  
Read Recover time before Write  
Programming Operation  
Erase Operation (1)  
0
0
0
0
nS  
uS  
tWHWH1 tWHWH1  
tWHWH2 tWHWH2  
16  
1.5  
30  
50  
16  
1.5  
30  
50  
16  
1.5  
30  
50  
16  
1.5  
30  
50  
typ  
sec  
sec  
max  
tVCS  
Vcc Setup time (Note 4)  
Table 13  
mS  
Notes:  
1. The Erase operation does not need programming time.  
2. These timings are for Sector Protect/Unprotect operation.  
3. This timing is only for sector Unprotect.  
3. Not 100% tested.  
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