VG3617161ET
1,048,576 x 16 - Bit
CMOS Synchronous Dynamic RAM
VIS
Basic Features and Function description
1.Simplified State Diagram
Self
Refresh
y
r
t
n
e
F
L
t
i
E
x
S
e
F
L
E
S
Mode
Register
Set
MRS
AUTO
REF
IDLE
Refresh
C
K
E
Power
Down
Active
Power
Down
CKE
ROW
ACTIVE
CKE
B
S
T
A
u
R
e
e
a
g
t
r
Read
o
Write
a
h
d
d
P
w
r
e
e
c
r
i
t
p
h
h
a
o
t
r
u
g
A
e
READ
SUSPEND
Read
CKE
CKE
CKE
CKE
WRITE
SUSPEND
READ
WRITE
Write
R
P
e
e
r
g
r
A
a
e
d
u
a
t
o
w
h
c
i
t
g
h
e
e
r
P
Write with
Auto Precharge
c
h
Read with
Auto Precharge
a
r
o
t
u
A
CKE
READ A
WRITE A
SUSPEND
CKE
WRITE A
READ A
SUSPEND
CKE
CKE
Precharge
POWER
Precharge
ON
Automatic sequence
Manual input
Note: After the AUTO refresh operation, precharge operation is
performed automatically and enter the IDLE state
Document:1G5-0189
Rev.1
Page8
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
