V23990-K209-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
2,5
2
Tj = Tjmax -25°C
Qrr
Qrr
2
1,6
1,2
0,8
0,4
Tj = Tjmax -25°C
Qrr
1,5
1
Qrr
Tj = 25°C
Tj = 25°C
0,5
0
0
0
I C (A)
R g on ( Ω)
0
4
8
12
16
40
80
120
160
200
At
At
At
Tj =
VCE
VGE
Tj =
°C
V
°C
V
A
V
25/125
600
25/125
600
8
=
VR =
=
IF =
±15
V
Rgon
=
VGE =
81
ꢀ
±15
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
12
10
Tj = Tjmax -25°C
IRRM
8
6
4
2
0
Tj = 25°C
IRRM
9
6
3
Tj = Tjmax - 25°C
IRRM
IRRM
Tj = 25°C
0
0
I C (A)
R gon ( Ω )
200
40
80
120
160
0
4
8
12
16
At
At
Tj =
VCE
VGE
Tj =
°C
V
°C
V
A
V
25/125
600
25/125
600
8
=
=
VR =
IF =
±15
V
Rgon
=
VGE =
81
ꢀ
±15
copyright Vincotech
7
Revision: 3