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V23990-K209-A-/1A/-PM 参数 Datasheet PDF下载

V23990-K209-A-/1A/-PM图片预览
型号: V23990-K209-A-/1A/-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel]
分类和应用: 局域网功率控制晶体管
文件页数/大小: 17 页 / 2488 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-K209-A-PM  
datasheet  
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7  
Figure 21  
IGBT  
Figure 22  
IGBT  
Power dissipation as a  
function of heatsink temperature  
Ptot = f(Th)  
Collector current as a  
function of heatsink temperature  
IC = f(Th)  
120  
100  
80  
60  
40  
20  
0
25  
20  
15  
10  
5
0
T h  
(
o C)  
T h (  
o C)  
0
50  
100  
150  
200  
0
50  
100  
150  
200  
At  
At  
Tj =  
Tj =  
VGE  
175  
°C  
175  
15  
°C  
V
=
Figure 23  
Power dissipation as a  
FWD  
Figure 24  
Forward current as a  
FWD  
function of heatsink temperature  
function of heatsink temperature  
Ptot = f(Th)  
IF = f(Th)  
60  
45  
30  
15  
0
20  
16  
12  
8
4
0
T h  
(
o C)  
T h (  
o C)  
120  
0
30  
60  
90  
120  
150  
0
30  
60  
90  
150  
At  
At  
Tj =  
Tj =  
150  
°C  
150  
°C  
copyright Vincotech  
9
Revision: 3