V23990-K209-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
2
1,6
1,2
0,8
0,4
0
1,5
1,2
0,9
0,6
0,3
0
Eon High T
Eon High T
Eon Low T
Eoff High T
Eon Low T
Eoff Low T
Eoff High T
Eoff Low T
I C (A)
R G ( Ω )
0
3
6
9
12
15
0
40
80
120
160
200
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
81
600
±15
8
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
81
Figure 7
IGBT
Figure 8
IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
1
0,8
0,6
0,4
0,2
0
Erec
Erec
Tj = Tjmax -25°C
0,8
Tj = Tjmax -25°C
Erec
0,6
Tj = 25°C
Erec
Tj = 25°C
0,4
0,2
0
I C (A)
R G ( Ω )
200
0
3
6
9
12
15
0
40
80
120
160
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
81
600
±15
8
V
Rgon
=
ꢀ
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5
Revision: 3