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V23990-K209-A-/1A/-PM 参数 Datasheet PDF下载

V23990-K209-A-/1A/-PM图片预览
型号: V23990-K209-A-/1A/-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel]
分类和应用: 局域网功率控制晶体管
文件页数/大小: 17 页 / 2488 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-K209-A-PM  
datasheet  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr [V] or  
VGE [V] or  
IC [A] or  
IF [A] or  
ID [A]  
VCE [V] or  
Tj  
Min  
Max  
VGS [V]  
VDS [V]  
D8,D9,D10,D11,D12,D13  
Forward voltage  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
1,51  
1,42  
0,86  
0,79  
0,03  
0,03  
VF  
Vto  
rt  
25  
25  
25  
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Reverse current  
0,05  
Ir  
1500  
mA  
Thermal grease  
RthJH  
thickness50um  
λ =1 W/mK  
K/W  
Thermal resistance chip to heatsink  
1,5  
T1,T2,T3,T4,T5,T6,T7  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current incl. Diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
5
5,8  
5,6  
1,9  
VGE(th) VCE=VGE  
0,00015  
8
V
V
1,1  
1,75  
1,85  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
15  
0
0,03  
300  
1200  
0
mA  
nA  
20  
-
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
46  
44  
21  
Rise time  
27  
ns  
317  
385  
96  
174  
0,65  
0,82  
0,54  
0,82  
td(off)  
tf  
Turn-off delay time  
Rgoff=54 ꢀ  
Rgon=54 ꢀ  
±15  
600  
8
Fall time  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
pF  
Eoff  
Cies  
Coss  
Crss  
QGate  
551  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
40  
Reverse transfer capacitance  
Gate charge  
17  
±15  
58  
nC  
Thermal grease  
thickness50um  
λ =1 W/mK  
RthJH  
K/W  
Thermal resistance chip to heatsink  
1,5  
D1,D2,D3,D4,D5,D6,D7  
Diode forward voltage  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
1,55  
1,57  
7,8  
1,77  
VF  
IRRM  
trr  
5
8
V
A
Peak reverse recovery current  
Reverse recovery time  
8,8  
434  
610  
1,16  
1,77  
75  
38  
0,48  
0,75  
ns  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
diF/dt=tbd A/us  
0
600  
µC  
di(rec)max  
/dt  
A/µs  
mWs  
Erec  
Thermal grease  
thickness50um  
λ =1 W/mK  
RthJH  
K/W  
Thermal resistance chip to heatsink  
2,5  
PTC  
Rated resistance  
Deviation of R100  
R100  
R
T=25°C  
T=100°C  
T=100°C  
T=25°C  
T=25°C  
1000  
%
R/R R100=1670 ꢀ  
R
-3  
3
1670,313  
7,635*10-3  
1,731*10-5  
A-value  
B(25/50) Tol. %  
B(25/100) Tol. %  
1/K  
1/K²  
B-value  
Vincotech NTC Reference  
E
copyright Vincotech  
3
Revision: 3