US2307
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
-20
Unit
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
V
±12
ID*
Continuous Drain Current
Pulsed Drain Current
-4
VGS=-4.5V
A
A
IDM
IS*
TJ
*
-16
Diode Continuous Forward Current
Maximum Junction Temperature
-1.5
150
°C
TSTG Storage Temperature Range
-55 to 150
0.83
0.3
TA=25°C
PD*
Maximum Power Dissipation
W
TA=100°C
Thermal Resistance-Junction to Ambient
150
°C/W
RθJA
*
Note : *Surface Mounted on 1in2 pad area, t ≤ 10sec.
Electrical Characteristics (TA = 25°C unless otherwise noted)
US2307
Min. Typ. Max.
Symbol
Parameter
Test Conditions
Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
-20
-
-
-
-1
V
V
GS=0V, IDS=-250µA
VDS=-16V, VGS=0V
TJ=85°C
-
IDSS Zero Gate Voltage Drain Current
µA
-
-
-30
-1
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
-0.5
-0.7
-
V
VDS=VGS, IDS=-250µA
VGS=±10V, VDS=0V
VGS=-4.5V, IDS=-4A
VGS=-2.5V, IDS=-2.5A
-
-
-
-
±100
55
nA
40
55
-0.75
a
RDS(ON) Drain-Source On-state Resistance
72
mΩ
a
VSD
Diode Forward Voltage
I
SD=-0.5A, VGS=0V
-1.3
V
Gate Charge Characteristics b
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
12
2.1
2.9
16
-
V
DS=-10V, VGS=-4.5V,
nC
I
DS=-4A
-
2
UNITPOWER [ ShenZhen XinDeYi Electronics Co., Ltd. ]
