US2307 参数 Datasheet PDF下载

US2307

P-Channel Enhancement Mode MOSFET

Features

•

-20V/-4A,

R

DS(ON)

=40mΩ (typ.) @ V

GS

=-4.5V

R

DS(ON)

=55mΩ (typ.) @ V

GS

=-2.5V

Pin Description

•

•

•

Super High Dense Cell Design

Reliable and Rugged

Lead Free and Green Devices Available

(RoHS Compliant)

Top View of SOT-23-3

S

Applications

G

•

Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems

D

P-Channel MOSFET

reserves the right to make changes to improve reliability or manufacturability without notice, and advise

customers to obtain the latest version of relevant information to verify before placing orders.

Unitpower

1