X-band High Power Amplifier
CHA7012
3
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2
9.2GHz
9.4GHz
9.6GHz
9.8GHz
10GHz
10.2GHz
10.4GHz
-1
0
1
2
3
4
5
6
7
8
Compression (dB)
Collector current @ 25°C versus compression and fr equency
Temperatures: -40°C; 20°C; +80°C Vc=7.5V Pul se= 100µs, Duty cycle 20%
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Vctrl
TTL Input Voltage
20 °C
-40 °C
+80 °C
-40 °C
0
1
2
3
4
5
6
TI/Vctrl (V)
Collector quiescent current versus TI & Vctrl and temperature
Ref. : DSCHA70129082- 23 March 09
6/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
