X-band High Power Amplifier
CHA7012
Typical measured characteristics
Measurements on Jig
Vc=7.5V, VTTL=5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
30
28
26
24
22
20
18
16
14
12
10
+20°C
+80°C
-40°C
8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1
Frequency (GHz)
Linear gain versus frequency and temperature
42
41
40
39
38
37
36
35
34
33
32
+20°C
+80°C
-40°C
8.5 8.7 8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9 11.1
Frequency (GHz)
Output Power @ 3dBc versus frequency and temperature
Ref. : DSCHA70129082- 23 March 09
3/10
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
