X-band High Power Amplifier
CHA7012
Electrical Characteristics
Tamb = 20°C, Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
Symbol
Fop
Parameter
Operating frequency
Min
9.2
Typ
Max
10.4
23
Unit
GHz
dB
G
Small signal gain
17.5
20
G_T
Small signal gain variation versus
temperature
-0.025
dB/°C
RLin
RLout
Psat
Input Return Loss
8
8
10
12
dB
dB
Output Return Loss
Saturated output power
39.5
-0.01
dBm
dB/°C
Psat_T
Saturated output power variation versus
temperature
P_3dBc
PAE_3dBc
Vc
Output power @ 3dBc (3)
Power Added Efficiency @ 3dBc
Power supply voltage (3)
Power supply quiescent current (1)
TTL input voltage
38
34
38.5
38
dBm
%
7.5
1.9
8
5
V
Ic
A
TI
0
V
I_TI
TTL input current
1
5
mA
V
Vctrl
Zctr
Collector control voltage
Vctrl input port impedance (2)
Operating temperature range
350
Ohm
°C
Top
-40
+80
(1) Parameter tunable by Vctrl when control biasing circuit used.
(2) This value corresponds to the 4 ports in parallel (Pin 4, 8, 14, 18)
(3) 0.5V variation on Vc leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Cmp
Vc
Parameter
Compression level (2)
Values
Unit
dBc
V
6
Power supply voltage with RF
Power supply quiescent current
Power supply current in saturation
Collector current control voltage
Maximum junction temperature
Storage temperature range
8
2.8
Ic
A
Ic_sat
Vctrl
Tj
3.5
A
6.5
V
175
°C
Tstg
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) For higher compression the level limit can be increased by decreasing the voltage Vc using
the rate 0.5 V / dBc
Equivalent Thermal resistance to Backside: 6°C/W
Ref. : DSCHA70129082- 23 March 09
2/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
