CHA6005-QEG
8-12GHz High Power Amplifier
Typical Board Measurements
Temperature : -40, +25, +85°C
VD1,2 = 8V, Id (Quiescent) = 420mA, CW mode
Power added efficiency at 3dBcomp versus Frequency and Temperature
50
45
40
35
30
25
20
15
Temp=-40 C & Pin=13dBm
10
Temp=+25 C & Pin=15dBm
5
Temp=+85 C & Pin=17dBm
0
7
8
9
10
11
12
13
Frequency(GHz)
Drain current at 3 dBcomp versus Frequency and Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Temp=-40°C & Pin=13dBm
Temp=+25°C & Pin=15dBm
Temp=+85°C & Pin=17dBm
7
8
9
10
11
12
13
Frequency(GHz)
Ref. : DSCHA6005-QEG5070 – 11 Mar 15
6/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
