8-12GHz High Power Amplifier
CHA6005-QEG
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
VD
Parameter
Values
9.0
Unit
V
Drain bias voltage
Drain bias current
Gate bias voltage
Id
700
mA
V
VG
Pin
Tj
-0.25
Maximum peak input power overdrive
Junction temperature
+18
dBm
°C
175
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
°C
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
VD1,2
VG12
Pad No
17, 13
18
Parameter
Drain supply voltage
Gate supply voltage
Values
8
Unit
V
-0.7
V
Ref. : DSCHA6005-QEG5070 – 11 Mar 15
3/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
