CHA6005-QEG
8-12GHz High Power Amplifier
Electrical Characteristics
Tamb.= +25°C, VD1,2 = +8.0V
Symbol
Freq
Parameter
Min
Typ
Max
Unit
GHz
dB
Operating frequency
8
12
G
Small signal gain
19.5
14
RLin
Input Return Loss
dB
RLout
Output Return Loss
10
dB
P1dB
Output power @ 1dBcomp
Output power @ 3dBcomp
Power Added Efficiency @ 1dBcomp
Power Added Efficiency @ 3dBcomp
Supply drain current @ 1dBcomp
Supply drain current @ 3dBcomp
Supply quiescent current
Gate supply voltage
31.5
32
dBm
dBm
%
P3dB
PAE1dB
PAE3dB
Id_1dBcomp
Id_3dBcomp
Idq
33
35
%
500
550
420
-0.7
mA
mA
mA
V
VG
These values are representative of onboard measurements and are defined in the reference
plan as defined in the paragraph "Definition of reference planes ".
Ref. : DSCHA6005-QEG5070 – 11 Mar 15
2/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
