XP162A01B5PR
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
Vgs=0V, f=1MHz
10000
1000
SWITCHING TIME vs. DRAIN CURRENT
Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≤1%
tf
Switching Time:t (ns)
Capacitance:C (pF)
1000
Ciss
100
td
（off）
tr
10
td
（on）
100
Coss
Crss
10
0
-5
-10
-15
-20
1
-0.01
-0.1
-1
-10
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
-10
Vds=-10V, Id=-2A
-6
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test
Gate-Source Voltage:Vgs (V)
Reverse Drain Current:Id (A)
-8
-5
Vgs＝-4.5V
-4
-3
-2.5V
-2
-1
0
0,4.5V
-6
-4
-2
0
0
5
10
15
0
-0.2
-0.4
-0.6
-0.8
-1
Gate Charge:Qg (nc)
Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Standardized Transition Thermal Resistance:γs(t)
10
Rth (ch-a)=62.5˚C/W, (Implemented on a ceramic PCB)
11
1
Single Pulse
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (sec)
873
TOREX [ TOREX SEMICONDUCTOR ]
