Power MOS FET
NP-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance: 0.25Ω (max)
NUltra
High-Speed Switching
NSOT-89
Package
■Applications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
■General Description
The XP162A01B5PR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-89 package makes high density mounting possible.
■Features
Low on-state resistance
: Rds(on)=0.25Ω(Vgs=-4.5V)
: Rds(on)=0.4Ω(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage
: -2.5V
High density mounting
: SOT-89
■Pin Configuration
■Pin Assignment
PIN
NUMBER
1
2
PIN
NAME
G
D
S
FUNCTION
Gate
Drain
Source
1
Ｇ
2
Ｄ
3
Ｓ
3
SOT-89
（TOP VIEW）
11
■Equivalent Circuit
■Absolute Maximum Ratings
Ta=25:
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
-20
±12
-2
-6
-2
2
150
-55~150
UNITS
V
V
A
A
A
W
:
:
1
2
P-Channel MOS FET
(1 device built-in)
3
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Note: When implemented on a ceramic PCB
870
TOREX [ TOREX SEMICONDUCTOR ]
