XP162A01B5PR
■Electrical Characteristics
DC Characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state
Resistance (note)
Forward Transfer Admittance
(note)
Body Drain Diode
Forward Voltage
Note: Effective during pulse test.
Ta=25:
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
Yfs
Vf
CONDITIONS
Vds=-20V, Vgs=0V
Vgs=±12V, Vds=0V
Id=-1mA, Vds=-10V
Id=-1A, Vgs=-4.5V
Id=-1A, Vgs=-2.5V
Id=-1A, Vds=-10V
If=-2A, Vgs=0V
MIN
TYP
MAX
-10
±10
-0.5
0.19
0.3
2.5
-0.85
-1.1
0.25
0.4
UNITS
µA
µA
V
Ω
Ω
S
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=-10V, Vgs=0V
f=1MHz
MIN
TYP
320
180
65
MAX
Ta=25:
UNITS
pF
pF
pF
Switching Characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
Vgs=-5V, Id=-1A
Vdd=-10V
CONDITIONS
MIN
TYP
10
15
40
50
MAX
Ta=25:
UNITS
ns
ns
ns
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(channel-ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a ceramic PCB
MIN
TYP
62.5
MAX
UNITS
:/W
11
871
TOREX [ TOREX SEMICONDUCTOR ]
