XP162A01B5PR
■Typical Performance Characteristics
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
-6
-5
-5V
-4.5V
-4V
Pulse Test, Ta=25:
-3V
-5
-6
Topr＝25℃
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Pulse Test, Vds=-10V
Drain Current:Id (A)
-4
-3
-2
-1
0
0
-3.5V
-2.5V
Drain Current:Id (A)
-4
-55℃
-3
-2
125℃
-2V
Vgs＝-1.5V
-1
0
-1
-2
-3
0
-1
-2
-3
-4
-5
Drain-Source Voltage:Vds (V)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
0.5
Pulse Test, Ta=25:
10
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse Test, Ta=25:
Drain-Source On-State Resistance
:Rds (on) (Ω)
0.4
Id＝-1A
-2A
0.3
Drain-Source On-State Resistance
:Rds (on) (Ω)
1
0.2
Vgs＝-2.5V
0.1
-4.5V
0.1
0
-1
-2
-3
-4
-5
-6
0
0
-2
-4
-6
-8
-10
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
11
Drain-Source On-State Resistance
:Rds (on) (Ω)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
Gate-Source Cut-Off Voltage Variance
:Vgs (off) Variance (V)
1
Pulse Test
0.6
0.4
0.2
0.0
-0.2
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
Vds=-10V, Id=-1mA
0.8
0.6
Id＝-2A
0.4
Vgs＝-2.5V
-1A
0.2
-1A,-2A
-4.5V
-0.4
-0.6
0
-60
-30
0
30
60
90
Ambient Temp.:Topr (:)
120
150
-60
-30
0
30
60
90
120
150
Ambient Temp.:Topr (:)
872
TOREX [ TOREX SEMICONDUCTOR ]
