Specification
THN6601B
□ Application Information
RF performance at TS ≤ 60 ℃ in common emitter configuration
Operation Mode
CW, class-AB
f (MHz)
465
VCE (V)
6
POUT (dBm)
30
GP (dB)
≥ 11
ηC (%)
56
Output Power or Power Gain
vs. Input Power
Power Gain or Collector Efficiency
vs. Output Power
40
35
30
25
20
15
10
5
18
16
14
12
10
8
20
18
100
90
80
70
60
50
40
30
20
10
0
f = 465 MHz, VCE = 6 V, ICQ = 5 mA
f = 465 MHz, VCE = 6 V, ICQ = 4 mA
16
14
12
10
8
GP
GP
ηC
POUT
6
6
4
4
2
2
0
0
30
0
10
0
5
10
15
20
25
15
20
25
30
35
Input Power, PIN (dBm)
Output Power, POUT (dBm)
http://www.tachyonics.co.kr
July 2005.
Rev. 1.0
Page 5 of 7
TI [ TEXAS INSTRUMENTS ]
